Atomically-thin LED scales across large areas

August 16, 2019 //By Julien Happich
Atomically-thin LED
Researchers at the Duisburg-Essen University have leveraged the direct bandgap of atomically thin transition metal dichalcogenides (here WS2) to design low-power red emitting LEDs which they say could be designed as large area emitters.

Their paper "Scalable Large-Area p−i−n Light-Emitting Diodes Based on WS2 Monolayers Grown via MOCVD” published in the ACS Photonics journal describes a vertical p−i−n device architecture using organic and inorganic injection layers on the anode and the cathode side, respectively, sandwiching WS2 monolayers as the active region.

They report red electroluminescence (at 619.5 ± 0.9nm) from an active area of 6mm2 starting already at a driving voltage of about 2.5V. The novelty is the scalability of their process, using an industrially relevant and reproducible deposition approach in a commercial horizontal multi-wafer AIXTRON MOCVD reactor. Deposited on a 2-inch sapphire wafer, the 0.7nm thick WS2 monolayers could be used to manufacture large area vertically-emitting devices, reaching a luminance of almost 1cd/m2 at 7V.


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