UnitedSiC: Practical considerations when comparing SiC and GaN in power applications

July 04, 2018 // By Anup Bhalla
Silicon carbide (SiC) and gallium nitride (GaN) semiconductor technologies are promising power semiconductor technologies. SiC devices in a cascode configuration enable existing systems to be upgraded to get the benefits of wide band-gap devices. The choice between SiC and GaN is not always straightforward, and the markets they can penetrate are perhaps wider than commonly supposed.
SiC, GaN, United Silicon Carbide, power, semiconductors

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