CMOS fab compatible GaN goes to 200mm wafers, could reach 300mm

November 07, 2017 //By Julien Happich
A developer of advanced wide bandgap semiconductor materials technologies, Kyma Technologies announced it has used its new K200 hydride vapor phase epitaxy (HVPE) growth tool to produce high quality 200mm diameter HVPE GaN on QST (Qromis Substrate Technology) templates.

This development follows the company's demonstration in 2016, of 150mm diameter GaN on QST templates in partnership with Qromis (formerly Quora Technology) who describes its QST templates as a CMOS fab-friendly solution whose key properties (stress, lattice mismatch, thermal stability and shape control) can be engineered independently for the best fit with GaN epitaxial and device layers.

"QST materials layers are integrated together in the conventional semiconductor fab with a simple manufacturing flow", Qromis mentions on its website, making it possible for large diameter substrates (6-inch, 8-inch, 12-inch or beyond) to support from a few to tens of microns of high-quality GaN epitaxy.